The 85th JSAP Autumn Meeting 2024
Advanced Search

Session Details

Oral presentation13 Semiconductors : 13.3 Insulator technology

[19p-B1-1~16]13.3 Insulator technology

Thu. Sep 19, 2024 1:00 PM - 5:15 PM JST
Thu. Sep 19, 2024 4:00 AM - 8:15 AM UTC
B1 (Exhibition Hall B)
Shinji Migita(AIST), Tomonori Nishimura(Univ. of Tokyo)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-B1-1][The 56th Young Scientist Presentation Award Speech] Exploration of elastic properties and atomistic networks of C, N-incorporated silicon oxide films using a universal neural network potential

〇Hiroki Sakakima1, Keigo Ogawa1, Sakurako Miyazaki1, Satoshi Izumi1 (1.Univ. of Tokyo)
Comment()
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[19p-B1-2]First-principles Study on Defect Levels Related to Silicon Emission from Interface into Oxide during Silicon Thermal Oxidation

〇Hiroyuki Kageshima1, Toru Akiyama2, Kenji Shiraishi3 (1.Shimane Univ., 2.Mie Univ., 3.Nagoya Univ.)
Comment()
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-B1-3]Surface oxidation model for Si wafers: (i) α-Quartz -β-Cristobalite mixed crystal model

〇Eiji Kamiyama1,2, Koji Sueoka2 (1.Globalwafers Japan Co. Ltd, 2.Okayama Pref. Univ.)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[19p-B1-4]Surface oxidation model for Si wafers: (ii) Emission of interstitial Si atoms

〇Eiji Kamiyama1,2, Koji Sueoka2 (1.Globalwafers Japan Co. Ltd, 2.Okayama Pref. Univ.)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B1-5]Radiation Effects on SiO2/Si Systems Analyzed by Capacitance–Voltage Measurement

〇Tomohiro Kato1, Takahiro Goya1, Shohei Yura1, Keiichiro Urabe1, Koji Eriguchi1 (1.Kyoto Univ.)
Comment()
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[19p-B1-6]Effects of post-deposition and post-metallization anneal on HfO2/ZrO2/HfO2 super-lattice gate-stack

〇Takefumi Kamioka1, Shinji Migita1, Takashi Matsukawa1, Naoya Okada1, Hiroyuki Ohta1 (1.AIST)
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-B1-7]Dipole Layer Formation at HfO2/SiO2 Interface Simulated by Molecular Dynamics

〇(M2)Kentaro Hirai1, Machika Naito1, Takanobu Watanabe1 (1.Waseda Univ.)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-B1-8]Research on MOS structure using high dielectric constant materials TiO2

〇Yota Uchida1, Yositaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of Agri & Tech)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B1-9]Fabrication of Germanium Gate Stack at Low Temperature using Nonheated Atomic Layer Deposition

〇Taisei Aso1, Hajime Kuwazuru1, Dong Wang2, Keisuke Yamamoto2 (1.IGSES, Kyushu Univ., 2.FES, Kyushu Univ.)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B1-10]Low temperature (210 °C) fabrication of Ge gate stack and its interfacial dipole analysis

〇Hajime Kuwazuru1, Taisei Aso1, Dong Wang2, Keisuke Yamamoto2 (1.IGSES, Kyushu Univ., 2.FES, Kyushu Univ.)
Comment()
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[19p-B1-11]Investigation of low-temperature oxidation of Ge substrates using sulfuric acid additive.

〇Hoshiki Harata1, Gen Shimizu1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri. and Tech.)
Comment()
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[19p-B1-12]Preparation and evalution of GeO2/Ge structure using CVD method.

〇Takumi Suzuki1, Keita Ishizuka1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri. & Tech.)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[19p-B1-13]Study of solution oxidation of Ge substrate

〇Gen Shimizu1, Yuta Tushiya1, Hoshiki Harata1, Mitarou Namiki1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of agri and tech)
Comment()
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[19p-B1-14]Study of the correlation between the bonding state and water resistance of GeO2 films

〇Keita Ishizuka1, Takumi Suzuki1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of Agri & Tech.)
Comment()
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-B1-15]Variation of GeO2/Ge interface properties with annealing time of Cu-PMA method

〇Kota Kanno1, Yositaka Iwazaki1, Tomo Ueno1, Mitaro Namiki1 (1.Tokyo Univ. of Agri and Tech)
Comment()
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[19p-B1-16]Characterization of GeO2 film by N2 annealing treatment

〇Yuta Tsuchiya1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri and Tech)
Comment()
Back to Category List