[19p-B1-1~16] 13.3 Insulator technology

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[19p-B1-13] Study of solution oxidation of Ge substrate

〇Gen Shimizu¹, Yuta Tushiya¹, Hoshiki Harata¹, Mitarou Namiki¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo univ. of agri and tech)

Keywords:

semiconductor

The oxide film deposition method, which is currently the mainstream in the semiconductor device fabrication process, is difficult to achieve uniform film thickness as the substrate diameter becomes larger. Therefore, this study examines a solution oxidation method that can achieve more uniform temperature. Based on the results of a previous study that showed that solution oxidation without water is possible, we verified a solution oxidation method that avoids the low water resistance of GeO2. As a result, we concluded that oxide film deposition with insulating properties on Ge substrates is feasible.