[19p-B1-1~16] 13.3 Insulator technology

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[19p-B1-14] Study of the correlation between the bonding state and water resistance of GeO₂ films

〇Keita Ishizuka¹, Takumi Suzuki¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo univ. of Agri & Tech.)

Keywords:

semiconductor

GeO₂ used in Ge-MOS generally has the disadvantage of being water soluble. It is known that GeO₂ can be made water-resistant by reducing the ionic bonding ratio through low-temperature deposition. However, this method has the disadvantage of low insulating property because it assumes the existence of defects in the oxide film. In this study, we aim to achieve both water resistance and insulation properties, and perform two-step deposition at different temperatures to verify the results.