[19p-B1-1~16] 13.3 Insulator technology

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-B1-15] Variation of GeO2/Ge interface properties with annealing time of Cu-PMA method

〇Kota Kanno¹, Yositaka Iwazaki¹, Tomo Ueno¹, Mitaro Namiki¹ (1.Tokyo Univ. of Agri and Tech)

Keywords:

germanium,Cu-post metallization annealing