[19p-B1-1~16] 13.3 Insulator technology

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[19p-B1-16] Characterization of GeO₂ film by N₂ annealing treatment

〇Yuta Tsuchiya¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri and Tech)

Keywords:

annealing,Insulating Film Technology,semiconductor

The key to realize Ge-MOSFETs with high mobility is the preparation of oxide GeO2 film, since the effect of GeO desorption at the Ge/GeO2 interface on the characteristics is a practical problem. This study proposes a method to improve such problems by annealing GeO2 films deposited by thermal oxidation.