[19p-B1-1~16] 13.3 Insulator technology

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[19p-B1-2] First-principles Study on Defect Levels Related to Silicon Emission from Interface into Oxide during Silicon Thermal Oxidation

〇Hiroyuki Kageshima¹, Toru Akiyama², Kenji Shiraishi³ (1.Shimane Univ., 2.Mie Univ., 3.Nagoya Univ.)

Keywords:

Si oxidation,Si emission,first-principles calculation

We focus on Si emitted from the interface into the oxide film during the Si oxidation process that forms the MOS interface. If structures called 2-coordinated SiO interstitial and 4-coordinated SiO interstitial, temporarily formed on the diffusion path in the oxide film, remain after the oxidation process, it might become defect levels. We have studied this by the first-principles calculation. The results are qualitatively similar to O vacancy in alpha-quartz, but quantitatively different. Since the transition between 2+ and 0 happens just around the middle of band gap, it is suggested that the defects could have serious consequences in terms of MOS device operation.