[19p-B1-1~16] 13.3 Insulator technology

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[19p-B1-6] Effects of post-deposition and post-metallization anneal on HfO₂/ZrO₂/HfO₂ super-lattice gate-stack

〇Takefumi Kamioka¹, Shinji Migita¹, Takashi Matsukawa¹, Naoya Okada¹, Hiroyuki Ohta¹ (1.AIST)

Keywords:

gate dielectric,higher-k