[19p-B3-1~22] 6.2 Carbon-based thin films

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[19p-B3-11] Implantation-temperature dependence in the formation of low-resistance doped layerby heavy B implantation into diamond

〇(M1)Kaiya Imamura¹, Yuhei Seki¹, Yasushi Hoshino¹ (1.Kanagawa Univ.)

Keywords:

ion implantation,Hall effect,Daimond semiconductor