[19p-B3-1~22] 6.2 Carbon-based thin films | The 85th JSAP Autumn Meeting 2024

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Session Details

Oral presentation6 Thin Films and Surfaces : 6.2 Carbon-based thin films

[19p-B3-1~22]6.2 Carbon-based thin films

Thu. Sep 19, 2024 1:00 PM - 7:15 PM JST
Thu. Sep 19, 2024 4:00 AM - 10:15 AM UTC

B3 (Exhibition Hall B)

Takako Nakamura(AIST), Takehiro Shimaoka(AIST), Shinya Ohmagari(AIST), Yuki Katamune(KIT)

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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-1]Effect of Interval Cooling on Hydrogen-Free DLC Film during its Preparation by Vacuum Arc Deposition

〇Seiya Watanabe¹, Genki Sano¹, Mirano Oneda¹, Hirofumi Takikawa¹, Hiroaki Sugita², Takahiro Hattori², Hiroki Gima² (1.Toyohashi Univ. Technol., 2.OSG Co., Ltd.)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-2]Discharge Sustaining in High-Rate Filtered Arc Deposition for Coating of Hydrogen-Free Hard DLC Film

〇Genki Sano¹, Seiya Watanabe¹, Mirano Oneda¹, Hirofumi Takikawa¹, Hiroaki Sugita², Takahiro Hattori², Hiroki Gima² (1.Toyohashi Univ. Technol., 2.OSG Co., Ltd.)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-B3-3]Effect of noble gas on DLC deposition using high-power impulse magnetron sputtering

〇Shiro Matsumoto¹, Akinori Oda², Toru Harigai³, Hiroyuki Kousaka³, Takayuki Ohta¹ (1.Meijo Univ., 2.Chiba Inst. Technol., 3.Gifu Univ.)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-4]Hydrogen free DLC synthesis by sputtering of carbonaceous industrial waste powder

〇Tomohiro Yamaguchi¹, Hiroyuki Kosaka¹, Toru Harigai¹, Yugo Suwa² (1.Gifu Univ., 2.MS Manufacturing Department)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-5]Structural change of hydrogenated amorphous carbon films by laser joining

〇Karyu Hase¹, Sarayut Tunmee², Yuko Aono¹, Ukit Rittihong², Yuki Hirata¹, Naoto Ohtake¹, Hiroki Akasaka¹ (1.Tokyo Inst. Tech, 2.SLRI, Thailand)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-6]Ultra-High-Speed DLC Deposition on the Outer Surface of Cylindrical Parts Using Local Gas Injection near Discharge Electrode

〇Taketo Nagai¹, Toru Harigai¹, Akihiko Ito^1,2, Hiroyuki Kousaka¹ (1.Gifu Univ, 2.RC LOGO)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-B3-7]Growth of single-crystal diamond using remote plasma CVD

〇Takehiro Shimaoka¹, Kaishu Nitta¹, Hideaki Yamada¹, Nobuteru Tsubouchi¹, Akiyoshi Chayahara¹, Yoshiaki Mokuno¹ (1.AIST)

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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-8]In-Situ Microscopic Observation of Growth Surface of Single Crystal Diamond

〇Kaishu Nitta¹, Takehiro Shimaoka¹, Hideaki Yamada¹, Nobuteru Tsubouchi¹, Akiyoshi Chayahara¹, Yoshiaki Mokuno¹ (1.AIST)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[19p-B3-9]Strain distribution in tungsten incorporated diamond epitaxial layers

〇Shinya Ohmagari¹, Taisuke Kageura¹, Ryota Ohtani¹ (1.AIST SSRC)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[19p-B3-10]Growth of ultra-heavily boron-doped diamond by hot-filament CVD

〇Ryota Ohtani¹, Taisuke Kageura¹, Shinya Ohmagari¹ (1.AIST)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[19p-B3-11]Implantation-temperature dependence in the formation of low-resistance doped layerby heavy B implantation into diamond

〇(M1)Kaiya Imamura¹, Yuhei Seki¹, Yasushi Hoshino¹ (1.Kanagawa Univ.)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[19p-B3-12]Fundamental investigation on the fabrication of the n-type semiconducting diamond by heavy P⁺-ion implantation

〇Yuhei Seki¹, Kaiya Imamura¹, Yasushi Hoshino¹ (1.Kanagawa Univ.)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[19p-B3-13]Evaluation of the effect of surface states on Be diffusion in diamond thin films

〇Yasuto Miyake¹, Hiroki Okuno¹, Hideyuki Watanabe^1,2 (1.RIKEN RNC, 2.AIST)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-B3-14]Formation of one dimensional nanopit structures on atomically flat surfaces
of diamond (111) by nickel nanoparticles

〇Kan Hayashi^1,2, Kazuki Kobayashi¹, Madoka Katayama¹, Yuhi Kaneko¹, Kimiyoshi Ichikawa², Taro Yoshikawa^2,3, Tsubasa Matsumoto^1,2, Takao Inokuma¹, Satoshi Yamasaki², Norio Tokuda^1,2 (1.Kanazawa Univ., 2.Kanazawa Univ. NanoMari., 3.Daicel Corp.)

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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-15]Effect of electrical alignment on thermal conductivity of high filler-content heat conduction sheets with diamond particles having bimodal particle size distribution

〇Yoshihiko Kubota¹, Ichiki Soichiro¹, Masahumi Inaba¹, Michihiko Nakano¹, Junya Suehiro¹ (1.Kyushu Univ.)

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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-16]Homogenized dielectrophoretic accumulation of fluorescent nanodiamond using ultra-small floating potential electrodes

〇Naoki Asano¹, Masahumi Inaba¹, Mitihiko Nakano¹, Junya Suehiro¹ (1.Kyushu Univ.)

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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-17]Carbon dioxide detection under high pressure using boron-doped diamond electrochemical electrodes

〇Seidai Inokuchi¹, Masahumi Inaba¹, Shinya Omagari², Michihiko Nakano¹, Junya Suehiro¹ (1.Kyushu Univ., 2.AIST)

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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[19p-B3-18]Effect of Oxygen Terminal Surface Adsorption Layer on Energy Dissipation in Single-Crystal Diamond MEMS

〇Keyun Gu^1,2, Zilong Zhang³, Wen Zhao¹, Guo Chen¹, Jian Huang², Satoshi Koizumi¹, Yasuo Koide¹, Meiyong Liao¹ (1.National Institute for Materials Science, 2.Shanghai University, 3.Tohoko University)

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6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-19]Fabrication of p-type inversion channel MOSFETs with atomically flat Al₂O₃/diamond (111) interface

〇Kazuki Kobayashi¹, Sato Kai¹, Kato Hitomitsu², Ogura Masahiko², Makino Toshiharu², Matsumoto Tsubasa¹, Ichikawa Kimiyoshi¹, Hayashi Kan¹, Inokuma Takao¹, Yamasaki Satoshi¹, Christoph Nebel^1,3, Tokuda Norio¹ (1.Kanazawa Univ., 2.AIST, 3.Diacara)

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6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[19p-B3-20]Combined local DLTS/CV measurement of Al₂O₃/OH-diamond (111) by scanning nonlinear dielectric microscopy

〇Kohei Yamasue¹, Tsubasa Matsumoto², Norio Tokuda², Yasuo Cho³ (1.RIEC, Tohoku Univ., 2.NanoMari, Kanazawa Univ., 3.NICHe, Tohoku Univ.)

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6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[19p-B3-21]Calibriation of binding energy and clarification of interfacial band bending for Al₂O₃/diamond heterojunction

〇Jiangwei LIU¹, Tokuyuki TERAJI¹, Bo Da¹, Yasuo Koide¹ (1.NIMS)

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7:00 PM - 7:15 PM JST(10:00 AM - 10:15 AM UTC)

[19p-B3-22]Fabrication of diamond MOS structure using SiO₂/Al₂O₃ bilayer thin film

〇Ryuichi Nakagawa¹, Taichi Saito¹, Tsubasa Matsumoto², Norio Tokuda², Takeshi Kawae¹ (1.Kanazawa Univ., 2.NanoMaRi.)

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Session Details

[19p-B3-1~22]6.2 Carbon-based thin films

[19p-B3-1]Effect of Interval Cooling on Hydrogen-Free DLC Film during its Preparation by Vacuum Arc Deposition

[19p-B3-2]Discharge Sustaining in High-Rate Filtered Arc Deposition for Coating of Hydrogen-Free Hard DLC Film

[19p-B3-3]Effect of noble gas on DLC deposition using high-power impulse magnetron sputtering

[19p-B3-4]Hydrogen free DLC synthesis by sputtering of carbonaceous industrial waste powder

[19p-B3-5]Structural change of hydrogenated amorphous carbon films by laser joining

[19p-B3-6]Ultra-High-Speed DLC Deposition on the Outer Surface of Cylindrical Parts Using Local Gas Injection near Discharge Electrode

[19p-B3-7]Growth of single-crystal diamond using remote plasma CVD

[19p-B3-8]In-Situ Microscopic Observation of Growth Surface of Single Crystal Diamond

[19p-B3-9]Strain distribution in tungsten incorporated diamond epitaxial layers

[19p-B3-10]Growth of ultra-heavily boron-doped diamond by hot-filament CVD

[19p-B3-11]Implantation-temperature dependence in the formation of low-resistance doped layerby heavy B implantation into diamond

[19p-B3-12]Fundamental investigation on the fabrication of the n-type semiconducting diamond by heavy P+-ion implantation

[19p-B3-13]Evaluation of the effect of surface states on Be diffusion in diamond thin films

[19p-B3-14]Formation of one dimensional nanopit structures on atomically flat surfacesof diamond (111) by nickel nanoparticles

[19p-B3-15]Effect of electrical alignment on thermal conductivity of high filler-content heat conduction sheets with diamond particles having bimodal particle size distribution

[19p-B3-16]Homogenized dielectrophoretic accumulation of fluorescent nanodiamond using ultra-small floating potential electrodes

[19p-B3-17]Carbon dioxide detection under high pressure using boron-doped diamond electrochemical electrodes

[19p-B3-18]Effect of Oxygen Terminal Surface Adsorption Layer on Energy Dissipation in Single-Crystal Diamond MEMS

[19p-B3-19]Fabrication of p-type inversion channel MOSFETs with atomically flat Al2O3/diamond (111) interface

[19p-B3-20]Combined local DLTS/CV measurement of Al2O3/OH-diamond (111) by scanning nonlinear dielectric microscopy

[19p-B3-21]Calibriation of binding energy and clarification of interfacial band bending for Al2O3/diamond heterojunction

[19p-B3-22]Fabrication of diamond MOS structure using SiO2/Al2O3 bilayer thin film

[19p-B3-12]Fundamental investigation on the fabrication of the n-type semiconducting diamond by heavy P⁺-ion implantation

[19p-B3-14]Formation of one dimensional nanopit structures on atomically flat surfaces
of diamond (111) by nickel nanoparticles

[19p-B3-19]Fabrication of p-type inversion channel MOSFETs with atomically flat Al₂O₃/diamond (111) interface

[19p-B3-20]Combined local DLTS/CV measurement of Al₂O₃/OH-diamond (111) by scanning nonlinear dielectric microscopy

[19p-B3-21]Calibriation of binding energy and clarification of interfacial band bending for Al₂O₃/diamond heterojunction

[19p-B3-22]Fabrication of diamond MOS structure using SiO₂/Al₂O₃ bilayer thin film