The 85th JSAP Autumn Meeting 2024
Advanced Search

Session Details

Oral presentation6 Thin Films and Surfaces : 6.2 Carbon-based thin films

[19p-B3-1~22]6.2 Carbon-based thin films

Thu. Sep 19, 2024 1:00 PM - 7:15 PM JST
Thu. Sep 19, 2024 4:00 AM - 10:15 AM UTC
B3 (Exhibition Hall B)
Takako Nakamura(AIST), Takehiro Shimaoka(AIST), Shinya Ohmagari(AIST), Yuki Katamune(KIT)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-1]Effect of Interval Cooling on Hydrogen-Free DLC Film during its Preparation by Vacuum Arc Deposition

〇Seiya Watanabe1, Genki Sano1, Mirano Oneda1, Hirofumi Takikawa1, Hiroaki Sugita2, Takahiro Hattori2, Hiroki Gima2 (1.Toyohashi Univ. Technol., 2.OSG Co., Ltd.)
Comment()
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-2]Discharge Sustaining in High-Rate Filtered Arc Deposition for Coating of Hydrogen-Free Hard DLC Film

〇Genki Sano1, Seiya Watanabe1, Mirano Oneda1, Hirofumi Takikawa1, Hiroaki Sugita2, Takahiro Hattori2, Hiroki Gima2 (1.Toyohashi Univ. Technol., 2.OSG Co., Ltd.)
Comment()
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-B3-3]Effect of noble gas on DLC deposition using high-power impulse magnetron sputtering

〇Shiro Matsumoto1, Akinori Oda2, Toru Harigai3, Hiroyuki Kousaka3, Takayuki Ohta1 (1.Meijo Univ., 2.Chiba Inst. Technol., 3.Gifu Univ.)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-4]Hydrogen free DLC synthesis by sputtering of carbonaceous industrial waste powder

〇Tomohiro Yamaguchi1, Hiroyuki Kosaka1, Toru Harigai1, Yugo Suwa2 (1.Gifu Univ., 2.MS Manufacturing Department)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-5]Structural change of hydrogenated amorphous carbon films by laser joining

〇Karyu Hase1, Sarayut Tunmee2, Yuko Aono1, Ukit Rittihong2, Yuki Hirata1, Naoto Ohtake1, Hiroki Akasaka1 (1.Tokyo Inst. Tech, 2.SLRI, Thailand)
Comment()
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-6]Ultra-High-Speed DLC Deposition on the Outer Surface of Cylindrical Parts Using Local Gas Injection near Discharge Electrode

〇Taketo Nagai1, Toru Harigai1, Akihiko Ito1,2, Hiroyuki Kousaka1 (1.Gifu Univ, 2.RC LOGO)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-B3-7]Growth of single-crystal diamond using remote plasma CVD

〇Takehiro Shimaoka1, Kaishu Nitta1, Hideaki Yamada1, Nobuteru Tsubouchi1, Akiyoshi Chayahara1, Yoshiaki Mokuno1 (1.AIST)
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-8]In-Situ Microscopic Observation of Growth Surface of Single Crystal Diamond

〇Kaishu Nitta1, Takehiro Shimaoka1, Hideaki Yamada1, Nobuteru Tsubouchi1, Akiyoshi Chayahara1, Yoshiaki Mokuno1 (1.AIST)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[19p-B3-9]Strain distribution in tungsten incorporated diamond epitaxial layers

〇Shinya Ohmagari1, Taisuke Kageura1, Ryota Ohtani1 (1.AIST SSRC)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[19p-B3-10]Growth of ultra-heavily boron-doped diamond by hot-filament CVD

〇Ryota Ohtani1, Taisuke Kageura1, Shinya Ohmagari1 (1.AIST)
Comment()
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[19p-B3-11]Implantation-temperature dependence in the formation of low-resistance doped layerby heavy B implantation into diamond

〇(M1)Kaiya Imamura1, Yuhei Seki1, Yasushi Hoshino1 (1.Kanagawa Univ.)
Comment()
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[19p-B3-12]Fundamental investigation on the fabrication of the n-type semiconducting diamond by heavy P+-ion implantation

〇Yuhei Seki1, Kaiya Imamura1, Yasushi Hoshino1 (1.Kanagawa Univ.)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[19p-B3-13]Evaluation of the effect of surface states on Be diffusion in diamond thin films

〇Yasuto Miyake1, Hiroki Okuno1, Hideyuki Watanabe1,2 (1.RIKEN RNC, 2.AIST)
Comment()
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-B3-14]Formation of one dimensional nanopit structures on atomically flat surfaces
of diamond (111) by nickel nanoparticles

〇Kan Hayashi1,2, Kazuki Kobayashi1, Madoka Katayama1, Yuhi Kaneko1, Kimiyoshi Ichikawa2, Taro Yoshikawa2,3, Tsubasa Matsumoto1,2, Takao Inokuma1, Satoshi Yamasaki2, Norio Tokuda1,2 (1.Kanazawa Univ., 2.Kanazawa Univ. NanoMari., 3.Daicel Corp.)
Comment()
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-15]Effect of electrical alignment on thermal conductivity of high filler-content heat conduction sheets with diamond particles having bimodal particle size distribution

〇Yoshihiko Kubota1, Ichiki Soichiro1, Masahumi Inaba1, Michihiko Nakano1, Junya Suehiro1 (1.Kyushu Univ.)
Comment()
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-16]Homogenized dielectrophoretic accumulation of fluorescent nanodiamond using ultra-small floating potential electrodes

〇Naoki Asano1, Masahumi Inaba1, Mitihiko Nakano1, Junya Suehiro1 (1.Kyushu Univ.)
Comment()
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-17]Carbon dioxide detection under high pressure using boron-doped diamond electrochemical electrodes

〇Seidai Inokuchi1, Masahumi Inaba1, Shinya Omagari2, Michihiko Nakano1, Junya Suehiro1 (1.Kyushu Univ., 2.AIST)
Comment()
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[19p-B3-18]Effect of Oxygen Terminal Surface Adsorption Layer on Energy Dissipation in Single-Crystal Diamond MEMS

〇Keyun Gu1,2, Zilong Zhang3, Wen Zhao1, Guo Chen1, Jian Huang2, Satoshi Koizumi1, Yasuo Koide1, Meiyong Liao1 (1.National Institute for Materials Science, 2.Shanghai University, 3.Tohoko University)
Comment()
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B3-19]Fabrication of p-type inversion channel MOSFETs with atomically flat Al2O3/diamond (111) interface

〇Kazuki Kobayashi1, Sato Kai1, Kato Hitomitsu2, Ogura Masahiko2, Makino Toshiharu2, Matsumoto Tsubasa1, Ichikawa Kimiyoshi1, Hayashi Kan1, Inokuma Takao1, Yamasaki Satoshi1, Christoph Nebel1,3, Tokuda Norio1 (1.Kanazawa Univ., 2.AIST, 3.Diacara)
Comment()
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[19p-B3-20]Combined local DLTS/CV measurement of Al2O3/OH-diamond (111) by scanning nonlinear dielectric microscopy

〇Kohei Yamasue1, Tsubasa Matsumoto2, Norio Tokuda2, Yasuo Cho3 (1.RIEC, Tohoku Univ., 2.NanoMari, Kanazawa Univ., 3.NICHe, Tohoku Univ.)
Comment()
6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[19p-B3-21]Calibriation of binding energy and clarification of interfacial band bending for Al2O3/diamond heterojunction

〇Jiangwei LIU1, Tokuyuki TERAJI1, Bo Da1, Yasuo Koide1 (1.NIMS)
Comment()
7:00 PM - 7:15 PM JST(10:00 AM - 10:15 AM UTC)

[19p-B3-22]Fabrication of diamond MOS structure using SiO2/Al2O3 bilayer thin film

〇Ryuichi Nakagawa1, Taichi Saito1, Tsubasa Matsumoto2, Norio Tokuda2, Takeshi Kawae1 (1.Kanazawa Univ., 2.NanoMaRi.)
Comment()
Back to Category List