[19p-B3-1~22] 6.2 Carbon-based thin films

6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[19p-B3-20] Combined local DLTS/CV measurement of Al₂O₃/OH-diamond (111) by scanning nonlinear dielectric microscopy

〇Kohei Yamasue¹, Tsubasa Matsumoto², Norio Tokuda², Yasuo Cho³ (1.RIEC, Tohoku Univ., 2.NanoMari, Kanazawa Univ., 3.NICHe, Tohoku Univ.)

Keywords:

diamond,scanning nonlinear dielectric microscopy,MOS interface

We observed the interface of Al₂O₃/OH-diamond (111) using time-resolved scanning nonlinear dielectric microscopy. Microscopic DLTS/CV measurements were performed at the same measurement points, enabling simultaneous real-space imaging reflecting the interface defect density and surface potential fluctuations. We found an increase in fluctuations from depletion to accumulation state due to the dominant carriers trapped at the interfacial defects. This non-uniform interface charge distribution can cause channel mobility reduction through Coulomb scattering. Our method is useful for microscopic understanding of the interfacial charge state and its effect on channel mobility.