[19p-B3-1~22] 6.2 Carbon-based thin films

7:00 PM - 7:15 PM JST(10:00 AM - 10:15 AM UTC)

[19p-B3-22] Fabrication of diamond MOS structure using SiO₂/Al₂O₃ bilayer thin film

〇Ryuichi Nakagawa¹, Taichi Saito¹, Tsubasa Matsumoto², Norio Tokuda², Takeshi Kawae¹ (1.Kanazawa Univ., 2.NanoMaRi.)

Keywords:

semiconductor,diamond