[19p-B3-1~22] 6.2 Carbon-based thin films

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-B3-7] Growth of single-crystal diamond using remote plasma CVD

〇Takehiro Shimaoka¹, Kaishu Nitta¹, Hideaki Yamada¹, Nobuteru Tsubouchi¹, Akiyoshi Chayahara¹, Yoshiaki Mokuno¹ (1.AIST)

Keywords:

chemical vapor deposition,crystal growth,diamond

We report growth of single-crystal diamond by remote plasma CVD. Single-crystal diamond was grown using a metal holder with an aperture which diameter is below the cutoff wavelength of the microwave. Several samples were grown by changing the aperture-substrate surface distance D. Single-crystal diamond was grown at a distance D = 5.5, 7.5, and 10 mm. Growth of diamond was confirmed by Raman peak at 1332cm^-1. With the increase of D, the growth rate decreased. In the presentation, we plan to report on the incorporation of nitrogen and the crystal quality.