[19p-B3-1~22] 6.2 Carbon-based thin films

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[19p-B3-9] Strain distribution in tungsten incorporated diamond epitaxial layers

〇Shinya Ohmagari¹, Taisuke Kageura¹, Ryota Ohtani¹ (1.AIST SSRC)

Keywords:

diamond,impurity,strain

Diamond films grown by the large-area hot filament CVD method typically result incorporation of metal atoms supplied from the heated filament wire. We have proposed a Metal-Assisted Termination (MAT) method which suggests the dislocations propagating from the substrate interact with the significant strain fields near the metal atoms, thereby altering their propagation behavior. This MAT method has shown dramatic effects in improving the in-plane uniformity of diamond electronic devices. Substantial improvements in both the performance and yield of Schottky barrier diodes have been confirmed on multiple substrates possessing different dislocation densities, including mosaic wafers, type IIb substrates, CVD substrates, and heteroepitaxial substrates. Moreover, the addition of metal atoms at high concentrations exceeding 10^18 cm^-3 has significantly altered the strain structure within the crystal plane. The introduction of the MAT layer has also been reported to mitigate the strain distribution inherent to the substrate itself. In this study, a tri-layer structure comprising a substrate/MAT buffer layer/high-purity epitaxial layer was fabricated on single-crystal (100) substrates using hot filament CVD. The study aimed to investigate how the strain distribution in the substrate is affected by the MAT buffer layer.