[19p-B5-1~16] 15.5 Group IV crystals and alloys

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[19p-B5-10] Growth of IV-VI thin-films on insulator by molecular beam deposition

〇Ryo Matsumura¹, Qinqiang Zhang¹, Bowen Ma^1,2, Ahmed Mahmoud^1,2, Naoki Fukata^1,2 (1.NIMS MANA, 2.Univ. Tsukuba)

Keywords:

SnS

As a growth method for group IV chalcogenide materials such as tin sulphide (SnSx) and germanium sulphide (GeSx), we have investigated molecular beam deposition, in which the crystal growth of SnS thin films was achieved on insulating films by using a plasma cracking cell as the S deposition source.