[19p-B5-1~16] 15.5 Group IV crystals and alloys | The 85th JSAP Autumn Meeting 2024

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Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[19p-B5-1~16]15.5 Group IV crystals and alloys

Thu. Sep 19, 2024 1:00 PM - 5:15 PM JST
Thu. Sep 19, 2024 4:00 AM - 8:15 AM UTC

B5 (Exhibition Hall B)

Katsunori Makihara(Nagoya Univ.), Ryo Yokogawa(Meiji Univ.)

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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-B5-1]Observation of crack generation in Ge-on-Si(111) and its suppression

〇Yuuka Shibahara¹, Shuya Kikuoka¹, Masaki Nagao¹, Ryota Mizoguchi¹, Michihiro Yamada¹, Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[19p-B5-2]Suppression of crack propagation in strained SiGe /Ge on Si(111) by selective ion implantation

〇Ryota Mizoguchi¹, Masaki Nagao¹, Yuka Shibahara¹, Mayu Aikawa¹, Michihiro Yamada¹, Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ.)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-B5-3]Fabrication of microbridges based on Ge-on-Insulator and observation of resonant light emission

〇Shu Yoshikawa¹, Takahiro Inoue¹, Ayaka Odashima¹, Riku Ishikawa¹, Ryoga Yokoki¹, Kentarou Sawano¹ (1.TCU)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[19p-B5-4]Fabrication of Ge p-i-n LEDs on Si and room-temperature EL emission characteristics

〇Hiroshi Imai¹, Aoki Sora¹, Kikuoka Syuya¹, Sawano Kentaro¹ (1.TCU)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[19p-B5-5]Fabrication of lateral SiGe spin transport devices on Ge on insulator

〇Kenji Oki¹, Shuya Kikuoka², Osamu Yoshikawa², Hajime Kuwazuru³, Atsuki Morimoto³, Keisuke Yamamoto³, Takamasa Usami^1,5, Azusa Hattori⁴, Kentarou Sawano², Kohei Hamaya^1,5 (1.CSRN, Osaka Univ., 2.Adv. Res. Lab., Tokyo City Univ., 3.IGSES, Kyushu Univ., 4.SANKEN, Osaka Univ., 5.OTRI, Osaka Univ.)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[19p-B5-6]Observation of room-temperature spin signals through Co₂FeAl_0.5Si_0.5/Ge-pn junctions

〇Kenji Oki¹, Shinnosuke Ueda¹, Shuya Kikuoka², Michihiro Yamada², Shunpei Fujii¹, Takamasa Usami^1,3, Kentarou Sawano², Kohei Hamaya^1,3 (1.CSRN, Osaka Univ., 2.Adv. Res. Lab., Tokyo City Univ., 3.OTRI, Osaka Univ.)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-B5-7]Formation of methylated germanane layers by molecular beam epitaxy

〇Atsuki Nakayama¹, Kazuho Matsumoto¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-B5-8]Surface treatment of Ge_1−xSn_x epitaxial layer toward the formation of ultra-thin segregated GeSn crystal

〇Taiga Matsumoto¹, Akio Ohta², Ryo Yokogawa^3,4, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigehisa Shibayama¹ (1.Nagoya Univ., 2.Fukuoka Univ., 3.Meiji Univ., 4.MREL)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[19p-B5-9]Passivation of grain-boundary-defects in Sn-doped polycrystalline Ge thin films (≤50nm) by post annealing

〇Ryu Hashimoto¹, Taishiro Koga¹, Takashi Kajiwara¹, Taizoh Sadoh¹ (1.Kyushu Univ.)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[19p-B5-10]Growth of IV-VI thin-films on insulator by molecular beam deposition

〇Ryo Matsumura¹, Qinqiang Zhang¹, Bowen Ma^1,2, Ahmed Mahmoud^1,2, Naoki Fukata^1,2 (1.NIMS MANA, 2.Univ. Tsukuba)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)English Presentation

[19p-B5-11]High Pressure Annealing Towards the Solid-Phase Crystallization of Thin-Film Germanium Sulfide

〇Ahmed Mahmoud^1,2, Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[19p-B5-12]Growth of Uniform GeS Thin Films by Aluminum Catalyst

〇Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata¹ (1.MANA-NIMS)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[19p-B5-13]High Power Factors in Low-Temperature Polycrystalline Ge Thin Films for Flexible Thermoelectric Generators

〇(DC)Koki Nozawa¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of. Tsukuba)

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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B5-14]Thick polycrystalline Ge layer synthesis and first demonstration of photoresponsivity on glass

〇Shintaro Maeda^1,2, Takamitsu Ishiyama^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-B5-15]Application of Si thin film to the anode of rechargeable battery -Improved properties by insertion of interlayer-

〇Yo Eto¹, Koki Nozawa¹, Reno Ito¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Tsukuba Univ.)

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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[19p-B5-16]Epitaxial growth of SiGe with thick Ge-rich regions on Si substrates by screen-printing and annealing

〇Kohei Ito¹, Ryoji Katsube¹, Yuki Imai², Satoru Miyamoto^1,2, Shota Suzuki³, Hideaki Minamiyama³, Marwan Dhamrin^3,4, Noritaka Usami^1,2,5 (1.Grad.Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Toyo Aluminium K.K., 4.Grad.Eng. Osaka Univ., 5.InFuS Nagoya Univ.)

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Session Details

[19p-B5-1~16]15.5 Group IV crystals and alloys

[19p-B5-1]Observation of crack generation in Ge-on-Si(111) and its suppression

[19p-B5-2]Suppression of crack propagation in strained SiGe /Ge on Si(111) by selective ion implantation

[19p-B5-3]Fabrication of microbridges based on Ge-on-Insulator and observation of resonant light emission

[19p-B5-4]Fabrication of Ge p-i-n LEDs on Si and room-temperature EL emission characteristics

[19p-B5-5]Fabrication of lateral SiGe spin transport devices on Ge on insulator

[19p-B5-6]Observation of room-temperature spin signals through Co2FeAl0.5Si0.5/Ge-pn junctions

[19p-B5-7]Formation of methylated germanane layers by molecular beam epitaxy

[19p-B5-8]Surface treatment of Ge1−xSnx epitaxial layer toward the formation of ultra-thin segregated GeSn crystal

[19p-B5-9]Passivation of grain-boundary-defects in Sn-doped polycrystalline Ge thin films (≤50nm) by post annealing

[19p-B5-10]Growth of IV-VI thin-films on insulator by molecular beam deposition

[19p-B5-11]High Pressure Annealing Towards the Solid-Phase Crystallization of Thin-Film Germanium Sulfide

[19p-B5-12]Growth of Uniform GeS Thin Films by Aluminum Catalyst

[19p-B5-13]High Power Factors in Low-Temperature Polycrystalline Ge Thin Films for Flexible Thermoelectric Generators

[19p-B5-14]Thick polycrystalline Ge layer synthesis and first demonstration of photoresponsivity on glass

[19p-B5-15]Application of Si thin film to the anode of rechargeable battery -Improved properties by insertion of interlayer-

[19p-B5-16]Epitaxial growth of SiGe with thick Ge-rich regions on Si substrates by screen-printing and annealing

[19p-B5-6]Observation of room-temperature spin signals through Co₂FeAl_0.5Si_0.5/Ge-pn junctions

[19p-B5-8]Surface treatment of Ge_1−xSn_x epitaxial layer toward the formation of ultra-thin segregated GeSn crystal