The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[19p-B5-1~16]15.5 Group IV crystals and alloys

Thu. Sep 19, 2024 1:00 PM - 5:15 PM JST
Thu. Sep 19, 2024 4:00 AM - 8:15 AM UTC
B5 (Exhibition Hall B)
Katsunori Makihara(Nagoya Univ.), Ryo Yokogawa(Meiji Univ.)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-B5-1]Observation of crack generation in Ge-on-Si(111) and its suppression

〇Yuuka Shibahara1, Shuya Kikuoka1, Masaki Nagao1, Ryota Mizoguchi1, Michihiro Yamada1, Kohei Hamaya2,3, Kentarou Sawano1 (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ)
Comment()
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[19p-B5-2]Suppression of crack propagation in strained SiGe /Ge on Si(111) by selective ion implantation

〇Ryota Mizoguchi1, Masaki Nagao1, Yuka Shibahara1, Mayu Aikawa1, Michihiro Yamada1, Kohei Hamaya2,3, Kentarou Sawano1 (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ.)
Comment()
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-B5-3]Fabrication of microbridges based on Ge-on-Insulator and observation of resonant light emission

〇Shu Yoshikawa1, Takahiro Inoue1, Ayaka Odashima1, Riku Ishikawa1, Ryoga Yokoki1, Kentarou Sawano1 (1.TCU)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[19p-B5-4]Fabrication of Ge p-i-n LEDs on Si and room-temperature EL emission characteristics

〇Hiroshi Imai1, Aoki Sora1, Kikuoka Syuya1, Sawano Kentaro1 (1.TCU)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[19p-B5-5]Fabrication of lateral SiGe spin transport devices on Ge on insulator

〇Kenji Oki1, Shuya Kikuoka2, Osamu Yoshikawa2, Hajime Kuwazuru3, Atsuki Morimoto3, Keisuke Yamamoto3, Takamasa Usami1,5, Azusa Hattori4, Kentarou Sawano2, Kohei Hamaya1,5 (1.CSRN, Osaka Univ., 2.Adv. Res. Lab., Tokyo City Univ., 3.IGSES, Kyushu Univ., 4.SANKEN, Osaka Univ., 5.OTRI, Osaka Univ.)
Comment()
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[19p-B5-6]Observation of room-temperature spin signals through Co2FeAl0.5Si0.5/Ge-pn junctions

〇Kenji Oki1, Shinnosuke Ueda1, Shuya Kikuoka2, Michihiro Yamada2, Shunpei Fujii1, Takamasa Usami1,3, Kentarou Sawano2, Kohei Hamaya1,3 (1.CSRN, Osaka Univ., 2.Adv. Res. Lab., Tokyo City Univ., 3.OTRI, Osaka Univ.)
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-B5-7]Formation of methylated germanane layers by molecular beam epitaxy

〇Atsuki Nakayama1, Kazuho Matsumoto1, Shigehisa Shibayama1, Mitsuo Sakashita1, Osamu Nakatsuka1,2, Masashi Kurosawa1 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-B5-8]Surface treatment of Ge1−xSnx epitaxial layer toward the formation of ultra-thin segregated GeSn crystal

〇Taiga Matsumoto1, Akio Ohta2, Ryo Yokogawa3,4, Masashi Kurosawa1, Mitsuo Sakashita1, Osamu Nakatsuka1, Shigehisa Shibayama1 (1.Nagoya Univ., 2.Fukuoka Univ., 3.Meiji Univ., 4.MREL)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[19p-B5-9]Passivation of grain-boundary-defects in Sn-doped polycrystalline Ge thin films (≤50nm) by post annealing

〇Ryu Hashimoto1, Taishiro Koga1, Takashi Kajiwara1, Taizoh Sadoh1 (1.Kyushu Univ.)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[19p-B5-10]Growth of IV-VI thin-films on insulator by molecular beam deposition

〇Ryo Matsumura1, Qinqiang Zhang1, Bowen Ma1,2, Ahmed Mahmoud1,2, Naoki Fukata1,2 (1.NIMS MANA, 2.Univ. Tsukuba)
Comment()
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)English Presentation

[19p-B5-11]High Pressure Annealing Towards the Solid-Phase Crystallization of Thin-Film Germanium Sulfide

〇Ahmed Mahmoud1,2, Qinqiang Zhang1, Ryo Matsumura1, Naoki Fukata1,2 (1.NIMS, 2.Univ. of Tsukuba)
Comment()
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[19p-B5-12]Growth of Uniform GeS Thin Films by Aluminum Catalyst

〇Qinqiang Zhang1, Ryo Matsumura1, Naoki Fukata1 (1.MANA-NIMS)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[19p-B5-13]High Power Factors in Low-Temperature Polycrystalline Ge Thin Films for Flexible Thermoelectric Generators

〇(DC)Koki Nozawa1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of. Tsukuba)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B5-14]Thick polycrystalline Ge layer synthesis and first demonstration of photoresponsivity on glass

〇Shintaro Maeda1,2, Takamitsu Ishiyama1,2, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba, 2.JSPS Research Fellow)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-B5-15]Application of Si thin film to the anode of rechargeable battery -Improved properties by insertion of interlayer-

〇Yo Eto1, Koki Nozawa1, Reno Ito1, Takashi Suemasu1, Kaoru Toko1 (1.Tsukuba Univ.)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[19p-B5-16]Epitaxial growth of SiGe with thick Ge-rich regions on Si substrates by screen-printing and annealing

〇Kohei Ito1, Ryoji Katsube1, Yuki Imai2, Satoru Miyamoto1,2, Shota Suzuki3, Hideaki Minamiyama3, Marwan Dhamrin3,4, Noritaka Usami1,2,5 (1.Grad.Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Toyo Aluminium K.K., 4.Grad.Eng. Osaka Univ., 5.InFuS Nagoya Univ.)
Comment()
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