[19p-B5-1~16] 15.5 Group IV crystals and alloys

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[19p-B5-12] Growth of Uniform GeS Thin Films by Aluminum Catalyst

〇Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata¹ (1.MANA-NIMS)

Keywords:

GeS

Two-dimensional layered semiconductors have been considered as one of the candidates for development of next-generation functaional electronics and optoelectronics. Previously, we introduced the synthesis of large-area germanium monosulfide (GeS) using the pre-deposited amorphous GeS method. However, it is prone to forming bulk-like GeS clusters compared to GeS thin films. In this abstract, we proposed to use the aluminum catalyst for growth of uniform GeS thin films restraining the formation of bulk-like GeS clusters simultaneously.