[19p-B5-1~16] 15.5 IV族結晶，IV-IV族混晶

16:00 〜 16:15英語発表

[19p-B5-12] Growth of Uniform GeS Thin Films by Aluminum Catalyst

〇Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata¹ (1.MANA-NIMS)

キーワード：

GeS

Two-dimensional layered semiconductors have been considered as one of the candidates for development of next-generation functaional electronics and optoelectronics. Previously, we introduced the synthesis of large-area germanium monosulfide (GeS) using the pre-deposited amorphous GeS method. However, it is prone to forming bulk-like GeS clusters compared to GeS thin films. In this abstract, we proposed to use the aluminum catalyst for growth of uniform GeS thin films restraining the formation of bulk-like GeS clusters simultaneously.