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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-B5-8]Surface treatment of Ge_1−xSn_x epitaxial layer toward the formation of ultra-thin segregated GeSn crystal

〇Taiga Matsumoto¹, Akio Ohta², Ryo Yokogawa^3,4, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigehisa Shibayama¹ (1.Nagoya Univ., 2.Fukuoka Univ., 3.Meiji Univ., 4.MREL)

Keywords:

segregation,GeSn,surface treatment

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Presentation Information

[19p-B5-8]Surface treatment of Ge1−xSnx epitaxial layer toward the formation of ultra-thin segregated GeSn crystal

Keywords:

Comment

[19p-B5-8]Surface treatment of Ge_1−xSn_x epitaxial layer toward the formation of ultra-thin segregated GeSn crystal