Presentation Information

[19p-B5-8]Surface treatment of Ge1−xSnx epitaxial layer toward the formation of ultra-thin segregated GeSn crystal

〇Taiga Matsumoto1, Akio Ohta2, Ryo Yokogawa3,4, Masashi Kurosawa1, Mitsuo Sakashita1, Osamu Nakatsuka1, Shigehisa Shibayama1 (1.Nagoya Univ., 2.Fukuoka Univ., 3.Meiji Univ., 4.MREL)
PDF DownloadDownload PDF

Keywords:

segregation,GeSn,surface treatment


Comment

To browse or post comments, you must log in.Log in