[19p-B5-1~16] 15.5 Group IV crystals and alloys

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[19p-B5-9] Passivation of grain-boundary-defects in Sn-doped polycrystalline Ge thin films (≤50nm) by post annealing

〇Ryu Hashimoto¹, Taishiro Koga¹, Takashi Kajiwara¹, Taizoh Sadoh¹ (1.Kyushu Univ.)

Keywords:

semiconductor,GeSn