[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-C41-1] Modified El-Hoshy−Gibbons model reproducing the Z₁ oscillation of electronic stopping cross sections in Si and W for low-velocity ions and its application to 4H-SiC

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

Keywords:

semiconductor,ion implantation,Z1 oscillation