[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-10] Impacts of Oxidation Temperature and Oxygen Partial Pressure on Luminescence Intensity of Color Centers at SiO₂/SiC Interfaces

〇Kentaro Onishi¹, Takato Nakanuma¹, Haruko Toyama², Kosuke Tahara², Katsuhiro Kutsuki², Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka Univ., 2.Toyota Central R&D Labs., Inc.)

Keywords:

SiO2/SiC interface,single-photon emitters,quantum defects