[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-11] Impacts of annealing ambient and time on the color center density at SiO₂/SiC interfaces

〇Takato Nakanuma¹, Kosuke Tahara², Haruko Toyama², Katsuhiro Kutsuki², Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka University, 2.Toyota Central R&D Labs., Inc.)

Keywords:

SiC,MOS interface,Single Photon Source