[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-13] Impact of Electron Irradiation on Channel Properties of SiC and Si MOSFETs

〇(M2)Kotaro Matsuki¹, Yoshihito Ichikawa², Yuichi Onozawa², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba, 2.Fuji Electric)

Keywords:

SiC power device,electron irradiation,MOS interface

High-energy electron irradiation on MOSFETs can improve the reverse recovery characteristics of body-pin diodes because the point defects created in the drift layer shorten the carrier lifetime. In this study, we analyze electron-irradiated SiC power MOSFETs, focusing on their effects on MOS channel characteristics such as threshold voltage, subthreshold swing, and transconductance. The decrease in transconductance due to irradiation was found to be caused by an increase in drift resistance.