[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[19p-C41-14] Interface Structure Dependence of Electronic States in 4H-SiC MOS Inversion Layers

〇(DC)Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

Keywords:

silicon carbide,inversion layer,interface structure

4H-SiC MOS反転層の電子移動度の改善に向けて，反転層中の電子状態の理解を深めることが重要である．4H-SiC(0001)/酸化膜界面近傍で，4H-SiCは，cubic界面構造とhexagonal界面構造とを取りうる．本研究では，これらの界面構造の違いが反転層中の電子状態へ与える影響を調べた．