[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-15] A quantitative analysis of the quantum confinement effect and the energy distribution of interface states in SiC MOSFETs

〇Xilun Chi¹, Koji Ito¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:

SiC,MOSFET,Interface states

The dependence of the interface state density distribution on body bias in SiC MOSFETs was investigated. By controlling the quantum confinement effect in the inversion layer through body bias, it was experimentally demonstrated that the interface state density distribution follows the quantized levels in the inversion layer, as the captured electron density does not depend on the body bias. This result indicates that most of the interface states are located on the SiC side of the MOS systems.