[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[19p-C41-18] First-principles analysis on electronic-structure of SiC/SiO₂ interface after NO annealing.

〇(M1)Kosei Sugiyama¹, Nahoto Funaki¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1.Kobe Univ.)

Keywords:

SiC,First-principles calculation,NO annealing

SiC/SiO₂ interfaces of SiC-MOSFETs have a problem of low mobility compared to that in the bulk. NO annealing has been used as a method to improve this problem, however the mechanism of nitridation at the atomic scale is not fully understood yet. We analyzed the interface electronic states before and after nitridation using first-principles calculations and confirmed that the nitrided layer screen the SiO₂ layer's influence. Furthermore, in this presentation, we will discuss the effects of reduced nitrogen concentration using a partially nitrided model.