[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[19p-C41-2] Suppression of stacking-fault expansion in SiC by helium implantation

〇Masashi Kato¹, Tong Li¹, Shunta Harada², Hitoshi Sakane³ (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)

Keywords:

SiC,ion implantation,stacking fault