[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-20] Effect of Post Annealing on SiO₂/SiC Structures Formed by Plasma Nitridation of SiC Surface Followed by SiO₂ Deposition

〇Hiroki Fujimoto¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:

SiC,MOS,Interface state density