[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-22] Luminescence and threshold voltage shift in SiC MOSFETs under gate AC stress

〇(M1)Ryosuke Shingo¹, Yuya Enjoji¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

Keywords:

SiC MOSFETs,threshold voltage shift,gate switching stress

In SiC MOSFETs, permanent threshold voltage shift has been reported upon bipolar AC switching, which refers to the switching of a MOSFET between it's accumulation and inversion states. One model to explain this phenomenon is the photon-assisted electron injection model, which attributes the threshold voltage shift to photons generated by electron-hole recombination under bipolar AC switching. This study investigates luminescence and threshold voltage shift under bipolar AC stress to evaluate the validity of the photon-assisted electron injection model.