[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

7:00 PM - 7:15 PM JST(10:00 AM - 10:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-23] Degradation of channel mobility in SiC MOSFETs with negative gate bias stress

〇Keiji Hachiken¹, Takuma Kobayashi¹, Hirohisa Hirai², Mitsuru Sometani^1,2, Mitsuo Okamoto², Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

Keywords:

SiC,MOSFET