[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-C41-3] Depth distribution of point defects in H or He ion implanted SiC diodes

〇Masashi Kato¹, Tong Li¹, Shunta Harada², Hitoshi Sakane³ (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)

Keywords:

SiC,ion implantation,point defect