[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[19p-C41-4] Observation of Baking Temperature Influence on Interfacial Thermal Resistance at Polymer/SiC Interface Using Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:

SiC Power Device,Interfacial Thermal Resistance,SU-8

Interfacial thermal resistance (ITR) is a critical parameter for evaluating heat dissipation performance of SiC power device packaging. We have developed a novel method to extract ITR from organic/SiC interface based on Optical-Interference Contactless Thermometry (OICT). Utilizing this method, we observed a dependence of ITR on the post-exposure baking temperature (T_bake) at the SU-8/SiC interface. At T_bake of 75°C, ITR was measured as 330 mm²KW^-1, which dramatically decreases to 8 mm²KW^-1 at 100°C. However, further increases in T_bake result in a rise in ITR to 90 mm²KW^-1 at 150°C and 340 mm²KW^-1 at 200°C. This research provides significant insights into ITR control at polymer/SiC interface via the optimization of post-exposure baking temperature, crucial for the design of efficient heat dissipation in power device packaging.