講演情報
[19p-C41-4]Observation of Baking Temperature Influence on Interfacial Thermal Resistance at Polymer/SiC Interface Using Optical-Interference Contactless Thermometry (OICT)
〇Yu Jiawen1、花房 宏明1、東 清一郎1 (1.広島大学)
キーワード:
SiCパワーデバイス、界面熱抵抗、SU-8
Interfacial thermal resistance (ITR) is a critical parameter for evaluating heat dissipation performance of SiC power device packaging. We have developed a novel method to extract ITR from organic/SiC interface based on Optical-Interference Contactless Thermometry (OICT). Utilizing this method, we observed a dependence of ITR on the post-exposure baking temperature (Tbake) at the SU-8/SiC interface. At Tbake of 75°C, ITR was measured as 330 mm2KW-1, which dramatically decreases to 8 mm2KW-1 at 100°C. However, further increases in Tbake result in a rise in ITR to 90 mm2KW-1 at 150°C and 340 mm2KW-1 at 200°C. This research provides significant insights into ITR control at polymer/SiC interface via the optimization of post-exposure baking temperature, crucial for the design of efficient heat dissipation in power device packaging.
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