[19p-C41-1~24] 13.7 Compound and power devices, process technology and characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C41-9] Investigation of color centers at SiO₂/SiC interfaces formed by various oxidation temperatures

〇(B)Yu Kaneko¹, Takato Nakanuma¹, Haruko Toyama², Kosuke Tahara², Katsuhiro Kutsuki², Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka Univ., 2.Toyota Central R&D Labs., Inc.)

Keywords:

SiC,Single photon source,MOS interface