[19p-C42-1~15] 15.4 III-V-group nitride crystals

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[19p-C42-5] Evaluation of Electrical Properties of Mg Ion-implanted GaN Single Crystals using THz-TDSE (IV)

〇Takashi Fujii^1,2, DingDing Wang¹, Momoko Deura¹, Toshiyuki Iwamoto², Atsushi Suyama³, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.PNP, 3.ITC)

Keywords:

THz,ion implantation,GaN

We are investigating whether it is possible to form an AlN protective film and perform activated annealing after Mg ion implantation into GaN under atmospheric pressure.In order to verify this, we are investigating whether it is possible to measure the electrical characteristics of THz-TDSE in a non-contact, non-destructive, and non-destructive manner without peeling off the protective film.In this study, THz-TDSE measurement was performed by producing a Mr./Ms. formed Mg ion implantation layer with a box type shape in order to determine the thickness of the ion implantation layer.