The 85th JSAP Autumn Meeting 2024
Advanced Search

Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[19p-C42-1~15]15.4 III-V-group nitride crystals

Thu. Sep 19, 2024 1:00 PM - 5:15 PM JST
Thu. Sep 19, 2024 4:00 AM - 8:15 AM UTC
C42 (Hotel Nikko 4F)
Ryota Ishii(Kyoto Univ.), Masato Oda(Wakayama Univ.), Bei Ma(Chiba Univ.)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-C42-1]Energy transport processes of longitudinal optical phonon at heterostructures of III-nitride semiconductors

〇Yoshihiro Ishitani1 (1.Chiba University)
Comment()
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)English Presentation

[19p-C42-2]Condition of phonon transport augmentation at GaInN/GaN heterointerface

〇(DC)KhaingShwe TheeEi1, Tatsuya Asaji1, Bei Ma1, Daisuke Iida2, Mohammed A. Najmi2, Kazuhiro Ohkawa2, Yoshihiro Ishitani1 (1.Chiba Univ., 2.KAUST)
Comment()
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-C42-3]Process of kinetic energy transfer of two-dimensional exciton in ultra-thin AlN/GaN/AlN quantum well analyzed by phononic–excitonic–radiative model

〇(D)Masaya Chizaki1, Yoshihiro Ishitani1 (1.Chiba Univ.)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[19p-C42-4]Effect of introducing an optical reflective layer on LO-like phonon resonance emission from n++-GaN—uid-GaN micro stripe structures

〇Daiki Yoshikawa1, Bojin Lin1, Hnin Lai Lai Aye1, Kohei Ueno2, Hiroshi Huzioka2, Yoshihiro Ishitani1 (1.Chiba Univ., 2.Univ. of Tkyo)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[19p-C42-5]Evaluation of Electrical Properties of Mg Ion-implanted GaN Single Crystals using THz-TDSE (IV)

〇Takashi Fujii1,2, DingDing Wang1, Momoko Deura1, Toshiyuki Iwamoto2, Atsushi Suyama3, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.PNP, 3.ITC)
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-C42-6]Characterization of GaN bulk by photothermal deflection spectroscopy for quantitative analysis of defect density

〇Masatomo Sumiya1, Hajime Fujikura2, Yoshitaka Nakano3, Yasuo Koide1, Toru Honda4 (1.NIMS, 2.SUMITOMO Chemical, 3.Chubu Univ., 4.Kogakuin Univ.)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-C42-7]Analysis of the in-gap states in GaN-based tunnel junctions

〇(M1)Motoki Kondo1, Hayato Ichikawa1, Hinata Uda1, Daichi Imai1, Tetsuya Takeuchi1, Takao Miyajima1 (1.Meijo Univ.)
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[19p-C42-8]Considerations of the relationship between photothermal deflection spectra and absorption coefficient spectra in GaN

〇Kayoko Natsume1, Koki Noda1, Haruki Nishihata1, Daichi Imai1, Makoto Miyoshi2, Tetsuya Takeuchi1, Takao Miyajima1 (1.Meijo Univ., 2.Nagoya Inst. of Tech.)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[19p-C42-9]Effect of Liquid Medium on the Thermal Characterizations of GaN using Photothermal Deflection Spectroscopy

〇(M1)Kakeru Tanaka1, Mayu Nomura1, Nozomi Yamasako1, Daichi Imai1, Takao Miyajima1 (1.Meijo Univ.)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[19p-C42-10]Analysis of sub-bandgap energy states in a GaN/Al1-xInxN multilayer structure

〇(M1)Haruki Nishihata1, Koki Noda1, Kenta Kobayashi1, Kayoko Natsume1, Daichi Imai1, Tetsuya Takeuchi1, Takao Miyajima1 (1.Meijo Univ.)
Comment()
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C42-11]Internal quantum efficiency mapping measurements of highly pure GaN crystals

〇Koshi Sano1, Hajime Fujikura2, Taichiro Konno2, Shota Kaneki2, Shuhei Ichikawa1, Kazunobu Kojima1 (1.Osaka Univ., 2.Sumitomo Chemical Co. Ltd.)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C42-12]Determination of deformation potentials for InGaN with low In composition region based on the k・pperturbation theory

〇Keito Mori1, Atsushi A. Yamaguchi2, Shuhei Ichikawa1, Kazunobu Kojima1 (1.Osaka Univ., 2.Kanazawa Inst. Tech.)
Comment()
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C42-13]Detailed analysis of wavelength dependence of photoluminescence lifetime
in an InGaN single quantum well

〇Itsuki Shimbo1, Hiroki Tosa1, Atsushi A. Yamaguchi1, Kazunori Iwamitsu2, Shigetaka Tomiya2 (1.KIT, 2.NAIST)
Comment()
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-C42-14]Microscopic line-scanning of simultaneous photo-acoustic & photoluminescence and time-resolved photoluminescence measurements in InGaN-quantum wells on a stripe-core GaN substrate

〇Shoki Jinno1, Keito Mori-Tamamura1, Atsushi Yamaguchi1, Susumu Kusanagi2, Yuya Kanitani2, Shigetaka Tomiya2, Yoshihiro Kudo2 (1.KIT, 2.Sony Semiconductor Solutions Corp.)
Comment()
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[19p-C42-15]Time-resolved photoluminescence study on red InGaN hybrid single-quantum-wells under selective excitation conditions

〇(D)Zhaozong Zhang1, Ryota Ishii1, Kanako Shojiki1, Mitsuru Funato1, Daisuke Iida2, Kazuhiro Ohkawa2, Yoichi Kawakami1 (1.Kyoto Univ., 2.KAUST)
Comment()
Back to Category List