[19p-P05-1~33] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[19p-P05-11] Piezoresponse force microscopy investigation of κ-Ga₂O₃ thin films epitaxially grown on an ε-GaFeO₃ substrate

〇Yuji Miyato¹, Kosuke Onishi¹, Hirofumi Yamada¹, Hiroyuki Nakanishi² (1.Ryukoku Univ., 2.Kyoto Inst. Tech.)

Keywords:

Ga2O3,PFM,semiconductor

The κ-Ga₂O₃ thin films epitaxially grown on an ε-GaFeO₃ substrate by mist CVD method were measured using contact-resonance piezoresponse force microscopy (CR-PFM) before and after the poling process. The local viscoelastic distributions of the same area taken by CR-PFM were measured by contact-resonance atomic force microscopy (CR-AFM), and the images were compared. These results showed the films' ferroelectricity and the initial sample's fine spontaneous polarization.