[19p-P05-1~33] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[19p-P05-18] Characterization of N-doped ZnO Films Deposited in /ce{Ar + N2} Gas Atmosphere

〇Haruki Ohmori¹, Yumika Yamada^1,2, Shuhei Funaki¹, Yasuji Yamada¹ (1.Shimane Univ., 2.Kobelco Res. Inst. Inc.)

Keywords:

ZnO,N-doped,p-type

Zinc oxide (ZnO), which is attracting attention as a substitute material for ITO used in LEDs and semiconductor lasers, easily generates donor defects and becomes n-type by adding Zn. On the other hand, when acceptors are added, donor defects are generated and carrier cancellation occurs (self-compensation effect), making stable p-type conversion difficult. In this study, we investigated how the characterization of ZnO are changed by addition of donors and acceptors to ZnO.