Presentation Information
[19p-P05-18]Characterization of N-doped ZnO Films Deposited in /ce{Ar + N2} Gas Atmosphere
〇Haruki Ohmori1, Yumika Yamada1,2, Shuhei Funaki1, Yasuji Yamada1 (1.Shimane Univ., 2.Kobelco Res. Inst. Inc.)
Keywords:
ZnO,N-doped,p-type
Zinc oxide (ZnO), which is attracting attention as a substitute material for ITO used in LEDs and semiconductor lasers, easily generates donor defects and becomes n-type by adding Zn. On the other hand, when acceptors are added, donor defects are generated and carrier cancellation occurs (self-compensation effect), making stable p-type conversion difficult. In this study, we investigated how the characterization of ZnO are changed by addition of donors and acceptors to ZnO.
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