[19p-P05-1~33] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[19p-P05-20] Characterization of Ti-doped ZnO transparent conductive thin films improved by annealing

〇Naoya Utsu¹, Shinya Aikawa², Ichiro Takano² (1.Grad School, Kogakuin Univ., 2.Kogakuin Univ.)

Keywords:

Transparent Conductive Thin Films,Zinc Oxide,Titanium

In ITO transparent conductive thin films as well as zinc oxide (ZnO) as an n-type semiconductor with a wide bandgap and degenerate with the addition of impurity donors has also been actively investigated. In this study, we focused on ZnO thin films doped with Ti. The samples were prepared by reactive sputtering at a room temperature, and transparency, electrical resistivity and semiconductor properties were investigated. Furthermore, by annealing the samples, the transmittance of all films increased by 5 points over ZnO to 85 %. The resistivity was also greatly reduced.