[19p-P05-1~33] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[19p-P05-25] Dependence of Transistor Characteristic of Amorphous Ga-Sn-O TFT
on Input Power during Sputtering Deposition

〇(M1)Taiyo Shinoda¹, Mutsumi Kimura^1,2, Hidenori Kawanishi² (1.Ryukoku Univ., 2.IMPR Center)

Keywords:

Thin-Film-Transistor,Ga-Sn-O

In this study, we report on the dependence of transistor characteristics of Ga-Sn-O (GTO)-based TFTs on input power. As a result, mobility and subthreshold swing improved with increasing the input power during deposition. The threshold voltage was closest to zero when the GTO film was deposited at 180 W. This suggests that higher input power during deposition increases the deposition rate, which reduces impurity uptake, but may result in defect formation.