[19p-P05-1~33] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

English Presentation

[19p-P05-27] Post-Annealing derived Mist CVD AlO_x/Al_xM_1-xO_y (M=Al, Hf) Properties for High-Temperature Sensors Applications

〇(PC)Abdul A Kuddus¹, Keiji Ueno², Hajime Shirai², Shinichiro Mouri¹ (1.Ritsumeikan Univ., 2.Saitama Univ.)

Keywords:

High-k,Mist CVD,High temperature sensor

we report the post-annealing derived structural evolution, surface morphology, crystalline behavior, and electrical characteristics of high-κ amorphous (α)- Al_xTi_1-xO_y (ATO) and Al_xHf_1-xO_y (AHO) thin films to be applied as an insulator in a high-temperature sensor. Amorphous ATO and AHO thin films were fabricated by solution-processed mist CVD from co-precursors of Al(acac)₃, Ti(acac)₂OiPr₂ or Hf(acac)₂OiPr₂ dissolved in CH₃OH+H₂O using 3 MHz atomizer under N₂ flow as generation and dilution gas (500 and 2400 sccm). The experimental results show that surface morphology varies within low rms of 1.06-3.32 nm in both ATO and AHO films, with a weak broad XRD peak at 17-28º attributed to partial anatase phase at annealer T>700 °C. Relatively higher thermal stability with smooth surface reveals the strong potential of mist CVD ATO and AHO to be applied in high-temperature sensors.