講演情報
[19p-P05-27]Post-Annealing derived Mist CVD AlOx/AlxM1-xOy (M=Al, Hf) Properties for High-Temperature Sensors Applications
〇(PC)Abdul A Kuddus1, Keiji Ueno2, Hajime Shirai2, Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.Saitama Univ.)
キーワード：
High-k、Mist CVD、High temperature sensor
we report the post-annealing derived structural evolution, surface morphology, crystalline behavior, and electrical characteristics of high-κ amorphous (α)- AlxTi1-xOy (ATO) and AlxHf1-xOy (AHO) thin films to be applied as an insulator in a high-temperature sensor. Amorphous ATO and AHO thin films were fabricated by solution-processed mist CVD from co-precursors of Al(acac)3, Ti(acac)2OiPr2 or Hf(acac)2OiPr2 dissolved in CH3OH+H2O using 3 MHz atomizer under N2 flow as generation and dilution gas (500 and 2400 sccm). The experimental results show that surface morphology varies within low rms of 1.06-3.32 nm in both ATO and AHO films, with a weak broad XRD peak at 17-28º attributed to partial anatase phase at annealer T>700 °C. Relatively higher thermal stability with smooth surface reveals the strong potential of mist CVD ATO and AHO to be applied in high-temperature sensors.
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