Presentation Information

[19p-P09-10]Enhanced electron mobility in InSb/Ga_0.22In_0.78Sb composite channel HEMT structures

〇TATSUHISA OBA¹, Tomoki Jinnai¹, Reo Ebihara¹, Wataru Nakajima¹, Issei Watanabe^2,1, Yoshimi Yamashita², Ryuto Machida², Shinsuke Hara², Akifumi Kasamatsu², Akira Endo¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.National Institute of Info. & Com. Tech.)

Keywords:

semiconductor,High Electron Mobility Transistor,compound semiconductor

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Presentation Information

[19p-P09-10]Enhanced electron mobility in InSb/Ga0.22In0.78Sb composite channel HEMT structures

Keywords:

Comment

[19p-P09-10]Enhanced electron mobility in InSb/Ga_0.22In_0.78Sb composite channel HEMT structures