Session Details
[19p-P09-1~15]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Thu. Sep 19, 2024 4:00 PM - 6:00 PM JST
Thu. Sep 19, 2024 7:00 AM - 9:00 AM UTC
Thu. Sep 19, 2024 7:00 AM - 9:00 AM UTC
P09 (Exhibition Hall A)
[19p-P09-1]Undoped GaAs/GaAsN superlattice evaluated by photoconductivity measurement
〇Ryota Wakasugi1, Aoi Umeki1, Riko Morita1, Takashi Tsukasaki1, Miki Fujita2, Toshiki Makimoto1 (1.Waseda Univ., 2.NIT, Ichinoseki Col.)
[19p-P09-2]Electrical characteristics of Si-doped GaAsN after annealing
〇Tomoki Yoshida1, Hirokazu Sasaki1, Takashi Tsukasaki1, Miki Fujita2, Toshiki Makimoto1 (1.Waseda Univ., 2.Ichinoseki Col.)
[19p-P09-3]Growth Temperature Dependence of Be-Doped GaAsN Using PL Characteristics
〇Sota Tanaka1, Miki Fujita2, Takashi Tsukasaki1, Toshiki Makimoto1 (1.Waseda Univ., 2.NIT, Ichinoseki College.)
[19p-P09-4]Hole conduction mechanism in Be-doped AlGaAsN
〇Yoshiki Ono1, Kou Inoue1, Natsu Minami1, Takashi Tsukasaki1, Miki Fujita2, Toshiki Makimoto1 (1.Waseda Univ., 2.NIT, Ichinoseki College)
[19p-P09-5]Photoluminescence characterization of GaPN alloys grown with Sb surfactant
〇(M2)Kazuya Yagi1, Hibiki Saida1, Shuhei Yagi1, Hiroyuki Yaguchi1, Yamato Kyuno2, Keisuke Yamane2 (1.Saitama Univ., 2.Toyohashi Univ. Tech)
[19p-P09-6]Growth and electrical characterization of Be-doped InSb thin films by MBE method
〇(M2)Riku Hoshino1, Yuya Urushido1, Hiroyuki Yaguchi1, Sachie Fujikawa1 (1.Saitama Univ.)
[19p-P09-7]As-free growth of InSb films on GaAs substrates covered with GaSb by Sb irradiation
〇Yuki Shirakawa1, Yohei Nukaga1, Hiroyuki Yahuchi1, Sachie Fujikawa1 (1.Saitama Univ.)
[19p-P09-8]Growth of Sn doped and Zn modulation doped InSb1-xNx thin films by sputtering
〇Sachie Fujikawa1, Yuto Ariji1, Hiroyuki Yaguchi1 (1.Saitama Univ.)
[19p-P09-9]Fabrication of PIN structure using InSb1-xNx thin films by magnetron sputtering method
〇(M1)Yuto Ariji1, Hiroyuki Yaguchi1, Sachie Fujikawa1 (1.Saitama Univ.)
[19p-P09-10]Enhanced electron mobility in InSb/Ga0.22In0.78Sb composite channel HEMT structures
〇TATSUHISA OBA1, Tomoki Jinnai1, Reo Ebihara1, Wataru Nakajima1, Issei Watanabe2,1, Yoshimi Yamashita2, Ryuto Machida2, Shinsuke Hara2, Akifumi Kasamatsu2, Akira Endo1, Hiroki Fujishiro1 (1.Tokyo Univ. of Science, 2.National Institute of Info. & Com. Tech.)
[19p-P09-11]Electronic properties of double doped InSb/Ga0.22In0.78Sb composite channel HEMT structures
〇(M1C)Wataru Nakajima1, Tomoki Jinnai1, Ebihara Reo1, Oba Tatsuhisa1, Watanabe Issei2, Machida Ryuto2, Yamashita Yoshimi2, Hara Shinsuke2, Kasamatsu Akihumi2, Endoh Akira1, Fujishiro Hiroki1 (1.TUS, 2.NICT)
[19p-P09-12]Lengthening Emission Wavelength from InSb Quantum Dots on GaSb by Stacking
〇Yuto Onoda1, Emin Kuwabara1, Sora Ominato1, Shin-Ichiro Gozu2, Hiroki Fujishiro1, Akira Endoh1 (1.TUS, 2.AIST)
[19p-P09-13]Study on spin-polarized light-emitting diodes with different stacking numbers of InGaAs quantum dots layers
〇Itsu Tanaka1, Seunghyeok Sim1, Kohei Etou1, Satoshi Hiura1, Junichi Takayama1, Agus Subagyo1, Kazuhisa Sueoka1, Akihiro Murayama1 (1.IST, Hokkaido Univ.)
[19p-P09-14]Carrier dynamics in 2D and 3D SML nanostructures by power-dependent PL
〇Ronel Intal Roca1, Itaru Kamiya1 (1.Toyota Tech. Inst.)
[19p-P09-15]Growth of GaAs by MBE on CVD Diamond Substrate (3)
〇Shouya Kiuchi1, Ryuji Oshima1, Kanji Iizuka1 (1.NIT)