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[19p-P09-11]Electronic properties of double doped InSb/Ga_0.22In_0.78Sb composite channel HEMT structures

〇(M1C)Wataru Nakajima¹, Tomoki Jinnai¹, Ebihara Reo¹, Oba Tatsuhisa¹, Watanabe Issei², Machida Ryuto², Yamashita Yoshimi², Hara Shinsuke², Kasamatsu Akihumi², Endoh Akira¹, Fujishiro Hiroki¹ (1.TUS, 2.NICT)

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semiconductor

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Presentation Information

[19p-P09-11]Electronic properties of double doped InSb/Ga0.22In0.78Sb composite channel HEMT structures

Keywords:

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[19p-P09-11]Electronic properties of double doped InSb/Ga_0.22In_0.78Sb composite channel HEMT structures