[20a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[20a-A22-3] Properties of SnO2 films grown by low temperature solution process

〇(M2)Ko Misato¹, Madan Niraula¹, Ichimura Masaya¹ (1.Nitech)

Keywords:

Oxide semiconductor,x-ray detector