[20a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[20a-A22-4] Optimization of SnO fabrication using SnO₂ target by sputtering and post-deposition annealing in reducing atmosphere

〇Tubasa Kobayasi¹, Kanta Kibishi¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:

Reduction sputtering,Oxide semiconductor