[20a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[20a-A22-5] TEM analysis of rutile-type GeO₂ film on TiO₂ (001) substrate

〇(D)Hitoshi Takane¹, Shinya Konishi¹, Ryo Ota², Yuichiro Hayasaka³, Takeru Wakamatsu¹, Yuki Isobe¹, Kentaro Kaneko⁴, Katsuhisa Tanaka¹ (1.Kyoto Univ., 2.Hokkaido Univ., 3.Tohoku Univ., 4.Ritsumeikan Univ.)

Keywords:

Rutile GeO2,Transmission electron microscopy

Rutile-type GeO₂ (r-GeO₂) has attracted attention as a new class of wide-bandgap semiconductors, due to its large bandgap of 4.7 eV and ambipolar dopability. In this study, we analyzed the structural properties of a r-GeO₂ film on a r-TiO₂ (001) substrate by using TEM observations.