[20a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[20a-A22-7] Dependence of Annealing Temperature on Electrical Properties of Cu and N Co-doped ZnO Films

〇Masaki Tanaka¹, Hiroshi Katumata¹ (1.Meiji Univ.)

Keywords:

ZnO,Sputtering method,p-type