[20a-A24-1~9] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A24-2] Improvement of hterointerface steepness of GaN/AlN Resonant Tunneling Diodes

〇Kazuki Takahashi¹, Yuto Yamada¹, Hirotaka Watanabe², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Graduate School of Eng., Nagoya Univ., 2.IMASS, Nagoya Univ., 3.Deep Tech Serial Innovation Center, Nagoya Univ., 4.IAR, Nagoya Univ.)

Keywords:

Resonant Tunneling Diodes